An ultra voltage technique based on foundary standard sell libray. Near–threshold–voltage circuit design:The design challenges and stances // International SoC Design Conference (ISOCC). IEEE Transactions on Circuits and Systems I, 2017,65(5):1567-1580.īEY I C,LIN P J,BU B C,et al. A near–threshold voltage oriented digital sell library for high–energy efficiency and optimized performance in 65nm CMOS process. Siliconsmart User' s Guide:Version 2013.06. Sub–threshold design for ultra low –power systems. Keywords: near-threshold, standard cell library, look-up table, liberty file This method was then used to characterize the smic55nm CMOS process library file in 0.6 V voltage and evaluate the relative error,and the results show that when compared to the library file established by traditional characterize method,the proposed method improved the library file's accuracy by 16%~63.51%,reduced the error of lookup table,and effectively improved the accuracy of library file.
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The method redefined the boundary of the lookup table by analyzing the actual application of standard cell in near-threshold voltage,and by analyzing the relative error between the circuit synthesis result and circuit simulation result,it re-determined the scale of the lookup table,in order to improve the accuracy of standard cell library in near-threshold voltage region.
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According to the actual application of a standard library cell operating in the near-threshold voltage region,and due to the problem of large error in the lookup table of traditional library files,this paper proposed a method to characterize the standard cell in near-threshold voltage region.